The primary method of doping silicon for semiconductor device manufacturing has been ion implantation, gas source doping, and solid source doping. Ion implantation is by far the most important mode of introducing dopant atoms into silicon substrates, addressing the increasing complexity of semiconductor chips and the processes that fabricate them.
The success of ion implantation processes is heavily dependent on the quality of the vacuum within ion implanters. Most of MKS' solutions for high vacuum applications in vacuum generation, control and monitoring are critical to the success of the ion implant process.
Ion Implantation
A detailed explanation of the most important mode of introducing dopant atoms into silicon substrates
Remote Plasma Sources for Clean Applications
For cleaning CVD and ALD/ALE process chambers
Residual Gas Analyzers
An effective tool to analyze system gas loads resulting from real leaks, virtual leaks or chamber wall outgassing.
Vacuum Flanges & Fittings
ISO-KF, ISO-MF, ISO-BF, CF (ConFlat), and welded style vacuum fittings, vacuum flanges and vacuum components
Baratron® Capacitance Manometers
For direct, gas independent, high accuracy pressure measurement