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Clean NDIR Endpoint Sensor, Process Sense™, Non-dispersive Infrared Chamber

Specifications

  • Type
    Process Sense™ NDIR
  • Measurement Technique
    NDIR
  • Measurement Range
    SiF4: 1-200 ppm (at 760 Torr)
  • Detection Limit
    1 ppm SiF4 (at 760 Torr)
  • Response Time
    1 second report rate
  • Calibration Accuracy
    ±10%
  • Electrical Connector
    DB25 (DB15 adapter available)
  • Power Requirements
    24 VDC (2 amp)
  • Dimensions
    38 x 12 x 13 cm (15 x 4.5 x 5 inches)
  • Weight
    2.5 kg (5.5 lbs)
  • Analog Output
    Analog 1 (AO1): 0-10 V (1x SiF4 concentration)
    Analog 2 (AO2): 0-10 V (20x SiF4 concentration)
  • Digital Output
    Fault signals
  • Sample Pressure
    1-760 Torr
  • Sample Temperature
    25-60°C
  • Fittings
    NW25, NW40, NW50 (others available upon request)

Features

Applications

  • Silicon Oxides (USG, FSG, PSG, BSG, BPSG)
  • Silicon Nitrides
  • Polysilicon
  • Silane or TEOS processes

Key Benefits

  • Reduced chamber clean times with accurate measurement of SiF4 concentration
  • Accurate determination of chamber clean endpoint reduces chamber wall over etching
  • Increase CVD wafer throughput by shortening chamber clean cycle

Need help?

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