from MKS Instruments
Atomic Layer Deposition (ALD)
Atomic Layer Deposition (ALD) deposits thin films on a substrate with monolayer precision, critical for leading edge deposition. This self-limiting, "pulsed" process sequentially introduces reactants into the process chamber in the gas phase to build successive monolayers of film on the wafer. These reactions often require the use of extremely precise doses of precursor materials.
Effective precursor delivery and control, process and tool monitoring and the appropriate selection of precursor materials positively influence parameters such as growth rate, reaction temperature, impurity levels and crystallinity of the deposited films.
Download Atomic Layer Deposition (ALD) Process Solutions from MKS Instruments. (935 kb)
Chemical Vapor Deposition (CVD)
Chemical Vapor Deposition (CVD) is a chemical process in which precursor gases are introduced into a reaction chamber at near ambient temperatures and directed towards a heated substrate in order to induce controlled chemical reactions. The chemical reactions result in the deposition of a solid thin film material onto the substrate surface. The electrical characteristic of the deposited film can vary greatly depending on the application.
Plasma Enhanced CVD (PECVD), a very common deposition technique, introduces a plasma into the process chamber in order to allow for deposition to occur at substrate surface temperatures that are significantly lower than those required for traditional CVD.
Tight control of CVD processes is critical to attaining the desired deposition conditions and film quality required to obtain high yields and low costs. The electrical characteristics, dielectric strength for insulating films, and resistivity for conducting films are critical to chip performance. Physically, the film thickness, step coverage and uniformity are also very important. The deposited film must be free of chemical and particle contamination, as well as pinholes and cracks.
Download Chemical Vapor Deposition Deposition (CVD) Process Solutions from MKS Instruments. (1.2 megabytes)
In addition to the typical requirements of most semiconductor processes, there are very specific
challenges for dry etch. Dry etch technology has been greatly refined, optimizing selectivity for today's advanced materials and ensuring anisotropic etching which allows for clean and precise patterns on each die. The most prevalent and advanced dry etch processes are based on plasma. Today's technology combines highly selective dry chemical etching with physical etch. A plasma source is instrumental to both processes.
The most advanced dry etch systems are designed to provide a controlled balance between selectivity and anisotropy. This balance is achieved through the use of leading edge system components, measurement devices, process information and control systems.
Download Dry Etch Process Solutions from MKS Instruments. (1.32 megabytes)
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