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More modern plasma etchers employ a parallel plate configuration that can be easily incorporated into mini-batch or single wafer process tools. Most configurations include the option of applying the RF bias to either the showerhead top electrode or to the substrate holder or both. This gives the user the choice of using simple, isotropic plasma etching (only the showerhead electrode is powered) or directional reactive ion etching (both the top and bottom electrodes are powered and the bias on the substrate attracts reactive ions - see Figure 2).
Semiconductor Etching