The R*evolution® III integrated remote plasma source, with improved capability over the earlier model, provides the highest performing and cleanest source of reactive gas species required in the processing of semiconductor wafers. The first in a new family of remote plasma sources specifically designed for “on-wafer” applications, the innovative R*evolution III combines MKS’s field-proven, patented Low-Field Toroidal plasma technology with a robust plasma applicator design that produces ultra clean atomic neutrals or radicals.
Atomic radicals are essential in many processes, such as photo-resist removal, wafer pre-clean, and thin film nitridation and oxidation. Radicals are typically created by generating a plasma; however, the associated charged particles are sometimes undesirable. To avoid these adverse effects, the plasma is generated remotely and the radicals are efficiently transported to the process chamber.
The R*evolution III reactive gas generator integrates a quartz vacuum chamber, an RF power supply and all necessary controls into a compact, self-contained unit for easy installation directly on the tool’s process chamber. The result is an extremely clean source of atomic radicals to bring about the desired reaction on the wafer, at a greatly reduced level of complexity