R*evolution® III 6 slm Remote Plasma Source
Overview
The R*evolution® III integrated remote plasma source, with improved capability over the earlier model, provides the highest performing and cleanest source of reactive gas species required in the processing of semiconductor wafers. The first in a new family of remote plasma sources specifically designed for “on-wafer” applications, the innovative R*evolution III combines MKS’s field-proven, patented Low-Field Toroidal plasma technology with a robust plasma applicator design that produces ultra clean atomic neutrals or radicals.
- Integrated, self-contained unit allows on-chamber installation
- Quartz plasma body for chemical inertness & low-recombination for most atomic species
- High performance, lower cost alternative to microwave or ICP systems
- Based on the patented low-field toroidal plasma technology
- Up to 6 kW of plasma power
Products
| Compare | Model | Drawings, CAD & Specs | Availability | Price | |||
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AX7695 Remote Plasma Source, 6 slm, O2 Flow, , R*evolution III |
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Specifications
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TypeAX7695 Integrated Remote Plasma Source
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Ignition Gas Supply100% O2 or Ar, or 90% O2/10% N2 (contact MKS for ignition with other gases)
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Process Gas SupplyUp to 6.0 slm of 100% O2, or 90% O2/10% N2 (contact MKS for ignition with other gases)
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Operating PressureIgnition: 0.5 to 2.0 Torr @ 1.0 to 6.0 slm (pressure measured at R*evolution III outlet)
Process: 0.5 to 2.0 Torr @ 1.0 to 6.0 slm -
OutputReady, AC line, Plasma On, Power Monitor
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InputsPlasma On/Off, Power Set
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Duty Cycle100%
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InterlocksInternal thermal switch and internal water flow switch to protect against insufficient cooling
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Wetted Materials6061-T6 Aluminum, Kalrez®, SiO2, 316L SS, Nickel, Fluorosilicone
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Control InterfaceDiscrete I/O, 9 and 25 pin D connectors, RS-232, DeviceNet™ and Ethernet (MKS TOOLweb®-enabled)
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Power Requirements180 to 228 VAC, 50/60 Hz, 30A, 3 phase
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Cooling Water1.75 gpm, < 30°C
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Operating TemperatureAmbient 40°C max.
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Dimensions15.7 inches long, 13.7 inches wide, 12.14 inches high (399 mm x 348 mm x 308 mm nominal)
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Weight85 lb. (38.6 Kg)
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ComplianceCE, SEMI F47, SEMI S2 (includes S8, S10, S14 assessments), UL 61010-1, CAN/CSA-61010-1
Features
Remote Plasma Generation
Atomic radicals are essential in many processes, such as photo-resist removal, wafer pre-clean, and thin film nitridation and oxidation. Radicals are typically created by generating a plasma; however, the associated charged particles are sometimes undesirable. To avoid these adverse effects, the plasma is generated remotely and the radicals are efficiently transported to the process chamber.
Self-contained Compact Unit
The R*evolution III reactive gas generator integrates a quartz vacuum chamber, an RF power supply and all necessary controls into a compact, self-contained unit for easy installation directly on the tool’s process chamber. The result is an extremely clean source of atomic radicals to bring about the desired reaction on the wafer, at a greatly reduced level of complexity
Resources
Application Notes
- R*evolution® III Remote Plasma Source: Low Particle Performance in O2/N2 Photoresist Ashing (299.9 kB, PDF)
- Developing a Process Power Setting Reference Chart for Use with the R*evolution® Remote Plasma Source (388.4 kB, PDF)
Literature
- R*evolution III Integrated Remote Plasma Source (296.2 kB, PDF)
Ultra-High Velocity