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revolution remote plasma source
Remote Plasma Source, 6 slm, O2 Flow, , R*evolution III
4 Weeks
4 Weeks

Specifications

  • Type
    AX7695 Integrated Remote Plasma Source
  • Ignition Gas Supply
    100% O2 or Ar, or 90% O2/10% N2 (contact MKS for ignition with other gases)
  • Process Gas Supply
    Up to 6.0 slm of 100% O2, or 90% O2/10% N2 (contact MKS for ignition with other gases)
  • Operating Pressure
    Ignition: 0.5 to 2.0 Torr @ 1.0 to 6.0 slm (pressure measured at R*evolution III outlet)
    Process: 0.5 to 2.0 Torr @ 1.0 to 6.0 slm
  • Output
    Ready, AC line, Plasma On, Power Monitor
  • Inputs
    Plasma On/Off, Power Set
  • Duty Cycle
    100%
  • Interlocks
    Internal thermal switch and internal water flow switch to protect against insufficient cooling
  • Wetted Materials
    6061-T6 Aluminum, Kalrez®, SiO2, 316L SS, Nickel, Fluorosilicone
  • Control Interface
    Discrete I/O, 9 and 25 pin D connectors, RS-232, DeviceNet™ and Ethernet (MKS TOOLweb®-enabled)
  • Power Requirements
    180 to 228 VAC, 50/60 Hz, 30A, 3 phase
  • Cooling Water
    1.75 gpm, < 30°C
  • Operating Temperature
    Ambient 40°C max.
  • Dimensions
    15.7 inches long, 13.7 inches wide, 12.14 inches high (399 mm x 348 mm x 308 mm nominal)
  • Weight
    85 lb. (38.6 Kg)
  • Compliance
    CE, SEMI F47, SEMI S2 (includes S8, S10, S14 assessments), UL 61010-1, CAN/CSA-61010-1

Features

Remote Plasma Generation

Atomic radicals are essential in many processes, such as photo-resist removal, wafer pre-clean, and thin film nitridation and oxidation. Radicals are typically created by generating a plasma; however, the associated charged particles are sometimes undesirable. To avoid these adverse effects, the plasma is generated remotely and the radicals are efficiently transported to the process chamber.

Self-contained Compact Unit

The R*evolution III reactive gas generator integrates a quartz vacuum chamber, an RF power supply and all necessary controls into a compact, self-contained unit for easy installation directly on the tool’s process chamber. The result is an extremely clean source of atomic radicals to bring about the desired reaction on the wafer, at a greatly reduced level of complexity

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