Remote Plasma Sources
Semiconductor and Electronic Thin Film applications use plasma sources to generate low-energy ions and radicals to react with material surfaces and chamber walls to remove contaminants and act as a precursor to aid in material deposition. MKS provides multiple options for radical generation including Toroidal and Microwave based Remote Plasma Sources supporting Fluorine, NF3, oxygen, nitrogen and hydrogen process chemistries.
Ultra-High Velocity